High Voltage Diode (18kV - 500mA - 2ns)

Introducing our latest state-of-the-art Silicon Carbide (SiC) high-voltage diode — engineered for extreme performance in modern high-frequency and high-voltage systems. With a voltage rating of up to 18kV and a continuous forward current of 500mA, this diode is built to handle demanding conditions while maintaining exceptional stability and efficiency.

The defining feature — and what truly sets this diode apart — is its ultra-fast reverse recovery time of ≤ 2 nanoseconds. This represents a fundamental leap in performance. At high frequencies, traditional diodes become a limiting factor due to stored charge and slow recovery, leading to switching losses and distorted waveforms. With near-instant recovery, this SiC diode enables precise, low-loss operation even in demanding MHz-range systems.

This performance is especially critical in resonant and high-frequency environments, where timing and waveform integrity directly affect energy transfer. By eliminating recovery-related delays, the diode allows for sharper switching, reduced heating, and more efficient operation in systems such as Tesla-style circuits, high-frequency flybacks, and advanced resonance experiments — particularly in setups where standing wave formation and phase coherence are essential.

Complementing its speed, the diode features a robust 10A surge current capability and a maximum forward voltage of 20.5V for reliable operation under transient conditions. Its ultra-low junction capacitance of just 3.5pF minimizes circuit loading, helping preserve high-Q resonance behavior and ensuring stable performance in high-frequency applications where parasitics become critical.

Ideal for high-voltage multipliers, high-frequency power supplies, plasma systems, and cutting-edge resonance experiments, this diode represents a major leap forward in high-voltage rectification technology.

Technical Specification:

(1) Measured at Ta = 25 °C, 50 Hz half-sine wave, 8.3 ms pulse.